Characterization of Metal-oxide-semiconductor Structures at Low Temperatures Using Self-aligned and Vertically Coupled Aluminum and Silicon Single-electron Transistors

Characterization of Metal-oxide-semiconductor Structures at Low Temperatures Using Self-aligned and Vertically Coupled Aluminum and Silicon Single-electron Transistors

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I incorporate an Al-AlOx-Al single-electron transistor (SET) as the gate of a narrow (aˆ¼ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, Coulomb blockade oscillations are observed at about 20 millikelvin, revealing the formation of a Si SET at the Si/SiO2 interface. Based on a simple electrostatic model, the two SET islands are demonstrated to be closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor. This vertically-aligned Al and Si SET system is used to characterize the background charges in a MOS structure at low temperature, which may also be sources of decoherence for Si quantum computation. A single charge defect, probably either a single charge trap at the Si/SiO2 interface or a single donor in the Si substrate, is detected and the properties of the defect are studied in this dissertation.The electron can shuttle between the donor site and the Si/SiO2 interface under an applied electric field E as shown by the arrow. The charge motion can be detected by the highly sensitive electrometer. (b) Band diagram of the situation in (a).


Title:Characterization of Metal-oxide-semiconductor Structures at Low Temperatures Using Self-aligned and Vertically Coupled Aluminum and Silicon Single-electron Transistors
Author: Luyan Sun
Publisher:ProQuest - 2008
ISBN-13:

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